View STGWT40V60DF_7423621.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. october 2013 docid024402 rev 5 1/17 17 stgw40v60df STGWT40V60DF trench gate field-stop igbt, v series 600 v, 40 a very high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? tail-less switching off ? v ce(sat) = 1.8 v (typ.) @ i c = 40 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode applications ? photovoltaic inverters ? uninterruptible power supply ? welding ? power factor correction ? very high frequency converters description this device is an igbt developed using an advanced proprietary trench gate field stop structure. the device is part of the v series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 to-3p 1 2 3 tab 1 2 3 c (2, tab) e (3) g (1) table 1. device summary order code marking package packaging stgw40v60df gw40v60df to-247 tube STGWT40V60DF gwt40v60df to-3p tube www.st.com
contents stgw40v60df, STGWT40V60DF 2/17 docid024402 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid024402 rev 5 3/17 stgw40v60df, STGWT40V60DF electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by maximum junction temperature pulsed collector current 160 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 a i f continuous forward current at t c = 100 c 40 a i fp (1) pulsed forward current 160 a p tot total dissipation at t c = 25 c 283 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.53 c/w r thjc thermal resistance junction-case diode 1.14 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgw40v60df, STGWT40V60DF 4/17 docid024402 rev 5 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 1.8 2.3 v v ge = 15 v, i c = 40 a t j = 125 c 2.15 v ge = 15 v, i c = 40 a t j = 175 c 2.35 v f forward on-voltage i f = 40 a 1.7 2.45 v i f = 40 a, t j = 125 c 1.4 v i f = 40 a, t j = 175 c 1.3 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -5400- pf c oes output capacitance - 220 - pf c res reverse transfer capacitance -180-pf q g total gate charge v cc = 480 v, i c = 40 a, v ge = 15 v, see figure 29 -226-nc q ge gate-emitter charge - 38 - nc q gc gate-collector charge - 95 - nc
docid024402 rev 5 5/17 stgw40v60df, STGWT40V60DF electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 40 a, r g = 10 , v ge = 15 v, see figure 28 -52-ns t r current rise time - 17 - ns (di/dt) on turn-on current slope - 1850 - a/ s t d ( off ) turn-off delay time - 208 - ns t f current fall time - 20 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 456 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 411 - j e ts total switching losses - 867 - j t d(on) turn-on delay time v ce = 400 v, i c = 40 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 28 -52-ns t r current rise time - 21 - ns (di/dt) on turn-on current slope - 1538 - a/ s t d ( off ) turn-off delay time - 220 - ns t f current fall time - 21 - ns e on (1) turn-on switching losses - 1330 - j e off (2) turn-off switching losses - 560 - j e ts total switching losses - 1890 - j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 40 a, v r = 400 v, v ge = 15 v, di/dt=100 a/ s see figure 28 -41-ns q rr reverse recovery charge - 440 - nc i rrm reverse recovery current - 21.6 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -1363-a/ s e rr reverse recovery energy - 151 - j t rr reverse recovery time i f = 40 a, v r = 400 v, v ge = 15 v, di/dt=100 a/ s t j = 175 c, see figure 28 - 109 - ns q rr reverse recovery charge - 2400 - nc i rrm reverse recovery current - 44.4 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 670 - a/ s e rr reverse recovery energy - 718 - j
electrical characteristics stgw40v60df, STGWT40V60DF 6/17 docid024402 rev 5 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j =25c) figure 5. output characteristics (t j =175c) figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current p tot 150 100 50 0 0 50 100 (w) 25 75 125 200 250 150 175 t c (c) am17385v1 i c 30 20 10 0 0 50 t c (c) 100 (a) 25 75 125 40 50 150 175 60 70 80 am17386v1 i c 80 60 20 0 0 1 3 (a) 2 4 100 120 v ce (v) 40 140 9v 11v 13v v ge =15v am17387v1 i c 80 60 20 0 0 1 3 (a) 2 4 100 120 v ce (v) 40 140 9v 11v 13v 7v v ge =15v am17388v1 v ce(sat) 2.0 1.8 1.4 1.2 -50 0 100 (v) 50 150 2.2 2.4 t c (c) 1.6 2.6 2.8 v ge =15v i c =80a i c =40a i c =20a am17389v1 2.0 1.8 1.4 1.2 10 20 40 30 50 2.2 2.4 i c (a) 1.6 2.6 2.8 v ge =15v t j =175c t j =25c t j =-40c 70 60 80 v ce(sat) (v) 3.0 am17390v1
docid024402 rev 5 7/17 stgw40v60df, STGWT40V60DF electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area figure 10. transfer characteristics figure 11. diode v f vs. forward current figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature i c 40 30 10 0 1 (a) 10 50 60 f(khz) 20 70 80 t c =80c t c =100c rectangular current shape, (duty cycle=0.5, vcc= 400v rg=10, vge=0/15v , tj=175 c) 90 am17391v1 i c 100 10 0.1 0.01 1 (a) 10 v ce (v) 1 10s 100s 1ms 100 single pulse, tc=25c tj<175c, v ge =15v am17392v1 i c 80 60 20 0 6 (a) 8 v ge (v) 40 tj=175c tj=25c tj=-40c 10 140 120 100 160 am17393v1 v f 1.6 0.8 10 (v) 20 i f (a) 1.2 tj=175c tj=25c tj=-40c 30 2.0 2.4 40 50 60 70 80 am17394v1 v ge(th) 0.8 0.6 -50 (norm) t c (c) 0.7 0 0.9 1.0 50 100 150 v ce =v ge i c =1ma am17395v1 v (br)ces 1.1 0.9 -50 (norm) t c (c) 1.0 0 50 100 150 0.95 1.05 i c =2ma am17396v1
electrical characteristics stgw40v60df, STGWT40V60DF 8/17 docid024402 rev 5 figure 14. capacitance variations figure 15. gate charge vs. gate-emitter voltage figure 16. switching losses vs. collector current figure 17. switching losses vs. gate resistance figure 18. switching losses vs. junction temperature figure 19. switching losses vs. collector emitter voltage c(pf) 10 0.1 v ce (v) 1000 1 10 100 10000 cies coes cres am17397v1 v ge (v) 0 0 q g (nc) 50 100 2 150 200 250 4 6 8 10 12 14 16 am17398v1 e(j) 0 0 i c (a) 800 20 40 400 1200 60 80 v cc =400v, v ge =15v rg=10, tj=175c 1600 2000 2400 2800 eon eoff am17399v1 e(j) 0 r g () 700 10 20 300 1100 30 40 v cc =400v, v ge =15v i c =40a, tj=175c 1500 1900 2300 eon eoff am17400v1 e(j) 25 t j (c) 500 50 75 300 700 100 125 v cc =400v, v ge =15v i c =40a, rg=10 900 1100 1300 eon eoff 150 am17401v1 e(j) 150 v ce (v) 600 200 250 200 1000 300 350 v ge =15v, tj=175c i c =40a, rg=10 eon eoff 400 800 1200 400 450 1400 1600 am17402v1
docid024402 rev 5 9/17 stgw40v60df, STGWT40V60DF electrical characteristics figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance figure 22. reverse recovery current vs. diode current slope figure 23. reverse recovery time vs. diode current slope figure 24. reverse recovery charge vs. diode current slope figure 25. reverse recovery energy vs. diode current slope t(ns) 0 i c (a) 20 40 10 60 80 v cc =400v, tj=175c, v ge =15v rg=10 t doff t don 100 t r t f am17403v1 t(ns) 0 r g () 10 20 10 30 40 v cc =400v tj=175c v ge =15v i c =40a t doff t don 100 t r t f 1000 am17404v1 i rm (a) 0 di/dt (a/s) 500 1000 10 1500 2000 v r =400v i f =40a tj=175c 20 30 40 50 60 70 80 90 0 2500 tj=25c am17405v1 t rr (s) 0 di/dt (a/s) 500 1000 1500 2000 v r =400v i f =40a tj=175c 50 100 150 200 250 0 2500 tj=25c am17406v1 q rr (nc) 0 di/dt (a/s) 500 1000 1500 2000 v r =400v i f =40a tj=175c 500 1000 1500 2000 2500 0 2500 3000 tj=25c am17407v1 e rr (j) 0 di/dt (a/s) 500 1000 1500 2000 v r =400v i f =40a tj=175c 200 400 600 800 1000 0 2500 1200 1400 1600 tj=25c am17408v1
electrical characteristics stgw40v60df, STGWT40V60DF 10/17 docid024402 rev 5 figure 26. thermal data for igbt figure 27. thermal data for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid024402 rev 5 11/17 stgw40v60df, STGWT40V60DF test circuits 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data stgw40v60df, STGWT40V60DF 12/17 docid024402 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024402 rev 5 13/17 stgw40v60df, STGWT40V60DF package mechanical data figure 32. to-247 drawing 0075325_g
package mechanical data stgw40v60df, STGWT40V60DF 14/17 docid024402 rev 5 table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
docid024402 rev 5 15/17 stgw40v60df, STGWT40V60DF package mechanical data figure 33. to-3p drawing 8045950_a
revision history stgw40v60df, STGWT40V60DF 16/17 docid024402 rev 5 5 revision history table 10. document revision history date revision changes 20-mar-2013 1 initial release. 17-apr-2013 2 document status promoted from preliminary data to production data. added: section 2.1: electrical characteristics (curves) 04-jun-2013 3 added minimum and maximum values for v ge(th) in table 4: static characteristics . 11-sep-2013 4 updated v f value in table 4: static characteristics . 08-oct-2013 5 updated title, features and description in cover page.
docid024402 rev 5 17/17 stgw40v60df, STGWT40V60DF please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STGWT40V60DF

	To Download STGWT40V60DF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .